EDBT 2026 Demo / reviewers in the wild / expert

G. Hari Rama Krishna

dblp:99/3625 · DBLP profile ↗
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1ranked-venue papers
1as first author
0since 2021 · last 1995
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Electronic design automation · 67% High-performance computing · 33%

Topics — the 3 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Electronic design automation › technology computer-aided design
device simulation		 0.011995
Finite element analysis of SiGe heterojunction devices · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1995
High-performance computing
finite element method		 0.011995
Finite element analysis of SiGe heterojunction devices · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1995
Electronic design automation › technology computer-aided design
semiconductor device simulation		 0.011995
Finite element analysis of SiGe heterojunction devices · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1995

Methods — techniques the papers use, named apart from their topics

finite element method · 0.0bipolar device simulation · 0.0
YearPublicationVenuePosition
1995 Finite element analysis of SiGe heterojunction devices
abstract
Two SiGe devices, a n/sup +/-n-p heterojunction diode and an n-p-n HBT have been analyzed using a two-dimensional bipolar device simulator which is based on the finite element method. The various shape functions used in the finite element formulations have been detailed. The dependence of the device characteristics on the various Ge mole-fraction material parameters has been studied. The variation of current gain of SiGe HBT with temperature is discussed.>
G. Hari Rama Krishna, Amit K. Aditya, Nirmal B. Chakrabarti, Swapna Banerjee
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1