In this paper, we study a compact wheeled robot that can jump while rolling. Some robots are capable of jumping or rolling, but as far as we know, those robots are not focused on jumping while rolling. We know that animals jump while running to escape from predators. Robots can move quickly by jumping while rolling. We consider a model of a robot jumping while rolling and evaluate the proposed robot. The proposed robot has two wheels and a jumping mechanism based on snap-through buckling of an elastic strip. The proposed robot can jump about 5.9 cm high and 22 cm wide on average while maintaining a traveling speed of about 1.2 m/s. The proposed robot can change the jumping angle without greatly decreasing the impulse for the moving speed.

The prototype VLSI test system ULTIMATE has a 1024-pin capability at 500-MHz test rate and a timing accuracy of +or-50 ps. A novel packaging method improves signal quality, heat removal, and cost. ULTIMATE's compact water cooled frame and thermal conduction elements enable 10001 W/L power consumption at a packing density of 270 chips/L.>

An application of Monte Carlo particle and relaxation time approximation modeling to quarter-micron Si MOSFETs is presented. Through a comparison between these two nonstatic models and a conventional model, nonstationary carrier transport is shown to dominate in 0.4 mu m or less channel devices, with peak velocities exceeding 1.0*10/sup 7/ cm/s. It is shown that the relaxation time approximation model tends to overestimate nonstationary carrier dynamics, especially the energy distribution.>

The current status of semiconductor device simulation at NTT is described. Device simulators at NTT are classified into two categories. One is the conventional macroscopic approach and the other is microscopic particle analysis using a Monte Carlo method. In this paper, these simulators are introduced together with the more interesting results. Through these examples, it is demonstrated that the device simulation takes an important role for accurate modeling of semiconductor devices. This report also concludes that the choosing the best simulation program for a given problem is the key to obtain effectively an accurate solution.