Li Chen 0001

dblp:c/LiChen-1 · DBLP profile ↗
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20ranked-venue papers
0as first author
3since 2021 · last 2025
0000-0002-3769-1488ORCID · verified

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Systems, architecture and hardware · 19 · 3 since 2021Software engineering, systems software and programming languages · 3Security and privacy · 1
YearPublicationVenuePosition
2025 A 10-bit 50-MS/s Radiation Tolerant Split Coarse/Fine SAR ADC in 65-nm CMOS
abstract
This article presents a 10-bit radiation-hardened-by-design (RHBD) SAR analog-to-digital converter (ADC) operating at 50 MS/s, designed for aerospace applications in high-radiation environments. The system- and circuit-level redundancy techniques are implemented to mitigate radiation-induced errors and metastability. A novel split coarse/fine asynchronous SAR ADC architecture is proposed to provide system-level redundancy. At circuits level, single-event effects (SEEs) error detection and radiation-hardened techniques are implemented. Our co-designed SEE error detection scheme includes last-bit-cycle (LBC) detection following the LSB cycle and metastability detection (MD) via a ramp generator with a threshold trigger. This approach detects and corrects radiation-induced errors using a coarse/fine redundant algorithm. The radiation-hardened latch comparators and D flip-flops (DFFs) are incorporated to further mitigate SEEs. The prototype design is fabricated using TSMC 65-nm technology, with an ADC core area of 0.0875 mm2and a power consumption of 2.79 mW at a 1.2-V power supply. Postirradiation tests confirm functionality up to 100-krad(Si) total ionizing dose (TID) and demonstrate over 90% suppression of large SEE under laser testing.
Jaime Cardenas 0001, Kamal El-Sankary, Li Chen 0001, Xiaotong Lu
IEEE Trans. Very Large Scale Integr. Syst.4
2021 Single Event Upset Evaluation for a 28-nm FDSOI SRAM Type Buffer in an ARM Processor
Rui Liu 0011, Mo Chen 0008, Xuantian Li, Haonan Tian, Li Chen 0001
J. Electron. Test.8
2021 Radiation Tolerant SRAM Cell Design in 65nm Technology
JianAn Wang, Haonan Tian, Lixiang Li 0003, Li Chen 0001
J. Electron. Test.6
2019 A Layout-Based Rad-Hard DICE Flip-Flop Design
Xixi Dai, Younis Mohammed Younis Ibrahim, Hongwen Sun, Issam Nofal, Zicai Shen, Li Chen 0001
J. Electron. Test.9
2017 BPPT - Bulk potential protection technique for hardened sequentials
abstract
In this paper, we present a method for hardening memory and sequential cells against soft errors. The effect of the ionizing particle on the bulk potential is exploited to prevent the induced SET from propagating in the circuit. The proposed method requires a minimum number of extra transistors. The solution is applied to D Flip-Flop design, and alpha and heavy-ions test results are presented.
Issam Nofal, Adrian Evans, Anlin He, Li Chen 0001, Rui Liu 0011, Mo Chen 0008, Sang H. Baeg, Shi-Jie Wen, Richard Wong
IOLTS6
2016 Instruction-Vulnerability-Factor-Based Reliability Analysis Model for Program Memory
Li Chen 0001, Longsheng Wu, Mo Chen 0008
J. Electron. Test.2
2016 An SEU-Resilient SRAM Bitcell in 65-nm CMOS Technology
Li Chen 0001, Lixiang Li 0001, Rui Liu 0011, Mo Chen 0008, Xuantian Li
J. Electron. Test.3
2016 A 10-Transistor 65 nm SRAM Cell Tolerant to Single-Event Upsets
Lixiang Li 0001, Li Chen 0001, Rui Liu 0011, Michael Newton, Mo Chen 0008
J. Electron. Test.4
2016 A Built-in Single Event Upsets Detector for Sequential Cells
Lixiang Li 0001, Li Chen 0001, Rui Liu 0011, Mo Chen 0008
J. Electron. Test.4
2016 Layout-based Single Event Mitigation Techniques for Dynamic Logic Circuits
Mulong Li, Xixi Dai, Li Chen 0001
J. Electron. Test.5
2015 Simulation and Experimental Evaluation of a Soft Error Tolerant Layout for SRAM 6T Bitcell in 65nm Technology
Lixiang Li 0001, Rui Liu 0011, Michael Newton, Li Chen 0001
J. Electron. Test.8
2015 A Novel Built-in Current Sensor for N-WELL SET Detection
Rui Liu 0011, Li Chen 0001, Jinshun Bi, Mulong Li
J. Electron. Test.3
2014 New approaches for synthesis of redundant combinatorial logic for selective fault tolerance
abstract
With shrinking process technologies, the likelihood of mid-life faults in combinatorial logic is increasing. Approximate logic functions are a promising approach to mitigate such faults as the technique can be applied to any digital circuit, it protects against multiple fault models and offers a trade-off between increased area and fault coverage. In this paper we present a new algorithm for generating approximate logic functions. The algorithm considers the failure probabilities of the gates and it uses a sum of product (SOP) representation. The results on some circuits show that FIT rate can be reduced by 75% with an area penalty of 46% and inserting only two additional layers of logic.
Li Chen 0001, Rui Liu 0011, Adrian Evans, Dan Alexandrescu, Shi-Jie Wen, Richard Wong
IOLTS2
2014 The Effect of Temperature-Induced Quiescent Operating Point Shift on Single-Event Transient Sensitivity in Analog/Mixed-Signal Circuits
Li Chen 0001
J. Electron. Test.2
2014 Single-Event Transient Measurements on a DC/DC Pulse Width Modulator Using Heavy Ion, Proton, and Pulsed Laser
Anlin He, Li Chen 0001, Shi-Jie Wen, Richard Wong, N. W. van Vonno, Bharat L. Bhuva
J. Electron. Test.5
2014 Single Event Resilient Dynamic Logic Designs
Mulong Li, Li Chen 0001, Rui Liu 0011, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Rita Fung, Jinshun Bi
J. Electron. Test.3
2013 Synthesis of Redundant Combinatorial Logic for Selective Fault Tolerance
abstract
With shrinking process technologies, the likelihood of mid-life logic faults is increasing. In this paper, we present an approach for mitigating the effects of faults in combinatorial logic through the selective addition of redundant logic. This approach can be applied to a generic digital circuit, protects against multiple fault models and offers a trade-off between area and fault coverage. The results show that fault coverage can be improved by 4x with an area penalty of 50% and only two additional layers of logic.
Li Chen 0001, Adrian Evans, Shi-Jie Wen, Richard Wong
PRDC2
2013 Correlation of Heavy-Ion and Laser Testing on a DC/DC PWM Controller
Li Chen 0001, L.-J. Gao, Shi-Jie Wen, Richard Wong, N. W. van Vonno
J. Electron. Test.3
2013 A Bulk Built-In Voltage Sensor to Detect Physical Location of Single-Event Transients
Li Chen 0001, Nelson J. Gaspard, Arthur F. Witulski, W. Timothy Holman, Bharat L. Bhuva, Shi-Jie Wen, Ramaswami Sammynaiken
J. Electron. Test.3
2012 Single-Event Effects Analysis of a Pulse Width Modulator IC in a DC/DC Converter
L. Fan, Li Chen 0001, Shi-Jie Wen, Richard Wong, N. W. van Vonno, Arthur F. Witulski, Bharat L. Bhuva
J. Electron. Test.3